Manufacturer 0
Application Level 0
Base Product Number 0
Ciss Max Input Capacitance @ Vds 0
Configuration 0
Current-Continuous Drain (Id) @25°C 0
Datasheet 0
Drain Current 0
Drain Source Resistance 0
Drain Source Voltage 0
Drain to Source Voltage (Vdss) 0
Drive Voltage (Max Rds On, Min Rds On) 0
FET Type 0
FET Feature 0
Gate Charge 0
Gate Source Threshold Voltage 0
Gate Source Voltage 0
Gate Charge (Qg) (Max) @ Vgs 0
Input Capacitance (Ciss) (Max) @ Vds 0
Length/Width/Height 0
Max Power 0
Max Power Dissipation 0
Moisture Sensitivity Level (MSL) 0
Mounting Type 0
Mounting Type 0
Operating Temperature 0
Operating Temperature (Max) 0
Operating Temperature (Min) 0
Operating Temperature 0
Package / Case (Metric) 0
Package/Case 0
Packaging 0
Power - Max 0
Power Dissipation (Max) 0
Rds On (Max) @ Id, Vgs 0
Rid 0
SPM 0
Series 0
Supplier Device Package 0
Technology 0
Vgs(th) (Max) @ Id 0
Vgs (Max) 0
datasheet 0
1,494 Results
| Part Number | Manufacturer | Price | Description | Application Level | Base Product Number | Ciss Max Input Capacitance @ Vds | Configuration | Current-Continuous Drain (Id) @25°C | Datasheet | Drain Current | Drain Source Resistance | Drain Source Voltage | Drain to Source Voltage (Vdss) | Drive Voltage (Max Rds On, Min Rds On) | FET Type | FET Feature | Gate Charge | Gate Source Threshold Voltage | Gate Source Voltage | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Length/Width/Height | Max Power | Max Power Dissipation | Moisture Sensitivity Level (MSL) | Mounting Type | Mounting Type | Operating Temperature | Operating Temperature (Max) | Operating Temperature (Min) | Operating Temperature | Package / Case (Metric) | Package/Case | Packaging | Power - Max | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | Rid | SPM | Series | Supplier Device Package | Technology | Vgs(th) (Max) @ Id | Vgs (Max) | datasheet |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| HXY MOSFET | 30 $3.2261 60 $3.1723 90 $3.0917 | N-Ch MOSFET ID 99A VDSS 650V RDON 26mΩ VGS -10/+25V | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | TO-247-4L | - | - | - | - | - | - | - | - | - | - | - | - | AAR027V065H2-HXY HXY MOSFET | |
| STMicroelectronics | 1 $4023.4637 | STMicroelectronics SiC Power switching power supply chip, 6passageway, 1200 VPower | - | ADP360120 | - | 6 N-Channel | 379A (Tj) | - | - | - | - | 1200V (1.2kV) | - | - | - | - | - | - | 944nC @ 18V | 28070pF @ 800V | - | - | - | 1 (Unlimited) | - | Chassis Mount | - | - | - | -40°C ~ 175°C (TJ) | - | Module | Tray | 704W (Tj) | - | 3.45mOhm @ 360A, 18V | 16841492 | - | - | ACEPACK | Silicon Carbide (SiC) | 4.4V @ 40mA | - | - | |
| HXY MOSFET | 30 $6.7802 60 $6.6672 90 $6.4977 | ID:60A VDSS:1200V RDON:40mΩ TYPE:N-Ch | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | TO-247-4L | - | - | - | - | - | - | - | - | - | - | - | - | ADQ120N040BH HXY MOSFET | |
| Infineon Technologies | 1+ $31.2992 5+ $31.2992 10+ $30.1814 50+ $30.1814 100+ $30.1814 | 178nC@20V, 882W, 5.703nF@800V, 11.3mΩ@20V, 1.2kV, 23V, 1 N-Ch TO-263 SMD | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | |
| VBsemi | 1 $14.9119 30 $14.4231 60 $14.0564 100 $13.8119 | TSMC wafer,JCET (Jiangsu Changjiang Electronics Technology)。TO263;NChannel,1200V;100A;RDS(ON)=15mΩ@VGS=18V,VGS=-10/+20V;Vth=2~4.5V;、;、Energy Storage System、、、。 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | TO-263-7 | - | - | - | - | - | - | - | - | - | - | - | - | AIMBG120R020M1-VB VBsemi | |
| VBsemi | 1 $14.9119 30 $14.4231 60 $14.0564 100 $13.8119 | TSMC wafer,JCET (Jiangsu Changjiang Electronics Technology)。TO263;NChannel,1200V;100A;RDS(ON)=15mΩ@VGS=18V,VGS=-10/+20V;Vth=2~4.5V;、;、Energy Storage System、、、。 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | TO-263-7 | - | - | - | - | - | - | - | - | - | - | - | - | AIMBG120R020M1XTMA1-VB VBsemi | |
| Infineon Technologies | 1+ $10.3305 5+ $9.9173 10+ $9.0908 50+ $9.0908 100+ $8.9256 250+ $8.9256 | N-Ch MOSFET, 1.2kV, SMD | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | |
| Infineon Technologies | 100 $4.5814 300 $4.5474 500 $4.5135 1,000 $4.4456 5,000 $4.4117 | 1.2KV 1individualNChannel TO-263-7 SMD mount | - | AIMBG120 | - | - | 30A | - | - | - | - | 1200 V | - | - | - | - | - | - | - | - | - | - | - | 1 (Unlimited) | - | Surface Mount | - | - | - | -55°C ~ 175°C | - | TO-263-8, D²Pak (7 Leads + Tab), TO-263CA | - | - | - | - | 17579088 | - | CoolSiC™ | PG-TO263-7-12 | SiCFET (Silicon Carbide) | - | - | - | |
| Infineon Technologies | 1+ $14.2833 5+ $12.7978 10+ $12.5693 50+ $12.5693 100+ $12.3407 250+ $12.3407 | N-Channel MOSFET 64A 750V SMD | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | |
| VBsemi | 2 $3.1954 30 $3.0906 60 $3.012 100 $2.9596 | TSMC wafer,JCET (Jiangsu Changjiang Electronics Technology)。TO263;NChannel,650V;35A;RDS(ON)=55mΩ@VGS=18V,VGS=-10/+20V;Vth=1.5~4.5V;、,、high frequency、。 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | TO-263-7 | - | - | - | - | - | - | - | - | - | - | - | - | AIMBG75R090M1H-VB VBsemi | |
| VBsemi | 2 $3.1954 30 $3.0906 60 $3.012 100 $2.9596 | TSMC wafer,JCET (Jiangsu Changjiang Electronics Technology)。TO263;NChannel,650V;35A;RDS(ON)=55mΩ@VGS=18V,VGS=-10/+20V;Vth=1.5~4.5V;、,、high frequency、。 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | TO-263-7 | - | - | - | - | - | - | - | - | - | - | - | - | AIMBG75R140M1H-VB VBsemi | |
| Infineon Technologies | 1 $19.7647 5 $18.4471 10 $18.1177 50 $17.7882 100 $17.7882 250 $17.7882 | 80nC@ 18 V 384W(Tc) 2.869nF@500V 750V 22mΩ@ 41.5A,18V 98A 750V 5.6V@14.9mA 1individualNChannel SMD mount | Automotive | - | 2.869nF@500V | - | - | - | 98A | 22mΩ@ 41.5A, 18V | 750V | - | - | 1individualNChannel | - | 80nC@ 18 V | 5.6V@14.9mA | - | - | - | - | - | 384W(Tc) | - | SMD mount | - | - | 175℃(TJ) | -55℃(TJ) | - | - | - | - | - | - | - | - | Tape and reel packaging | - | - | - | - | - | AIMDQ75R016M1HXUMA1 Infineon Technologies | |
| Infineon Technologies | 1 $21.5686 10 $15.3802 50 $13.6664 | 67nC@ 18 V 326W(Tc) 2.217nF@500V 18mΩ@ 32.5A,20V 81A 750V 5.6V@11.7mA 1individualNChannel SMD mount | Industrial | - | 2.217nF@500V | - | - | - | 81A | 18mΩ@ 32.5A, 20V | 750V | - | - | 1individualNChannel | - | 67nC@ 18 V | 5.6V@11.7mA | - | - | - | - | - | 326W(Tc) | - | SMD mount | - | - | 175℃(TJ) | -55℃(TJ) | - | - | - | - | - | - | - | - | Tape and reel packaging | - | - | - | - | - | - | |
| Infineon Technologies | 1+ $33.3851 5+ $33.3851 10+ $32.1927 50+ $32.1927 100+ $32.1927 | Infineon CoolSiC N-Ch MOSFET Vds=1200V 52A TO-247 TH 3-Pin | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | |
| HXY MOSFET | 30 $17.9753 60 $17.6758 90 $17.2264 | N-Ch MOSFET ID 63A VDSS 1200V RDON 32mΩ | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | TO-247 | - | - | - | - | - | - | - | - | - | - | - | - | AIMW120R035M1HXKSA1-HXY HXY MOSFET | |
| VBsemi | 2 $3.8345 30 $3.7088 60 $3.6144 100 $3.5516 | TSMC wafer,JCET (Jiangsu Changjiang Electronics Technology)。TO247-4L;NChannel,1200V,65A,RDS(ON)=35mΩ@VGS=18V,VGS= -10/+22V,Vth=2~4V;Suitable for high power、、;、AI、industryAI。 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | TO-247-3 | - | - | - | - | - | - | - | - | - | - | - | - | AIMW120R035M1HXKSA1-VB VBsemi | |
| VBsemi | 2 $3.5246 30 $3.4089 60 $3.3223 100 $3.2646 | TSMC wafer,JCET (Jiangsu Changjiang Electronics Technology)。TO247-4L;NChannel,1200V,65A,RDS(ON)=35mΩ@VGS=18V,VGS= -10/+22V,Vth=2~4V;Suitable for high power、、;、AI、industryAI。 | Industrial | - | - | - | - | - | 60A | 40mΩ@ 10V | 10V | - | - | 1individualNChannel | - | - | - | - | - | - | - | - | - | - | Through hole mounting | - | -55℃~150℃ | - | - | - | TO-247 | - | - | - | - | - | - | - | - | - | - | - | - | AIMW120R045M1-VB VBsemi | |
| VBsemi | 2 $3.8345 30 $3.7088 60 $3.6144 100 $3.5516 | TSMC wafer,JCET (Jiangsu Changjiang Electronics Technology)。TO247-4L;NChannel,1200V,65A,RDS(ON)=35mΩ@VGS=18V,VGS= -10/+22V,Vth=2~4V;Suitable for high power、、;、AI、industryAI。 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | TO-247-3 | - | - | - | - | - | - | - | - | - | - | - | - | AIMW120R045M1XKSA1-VB VBsemi | |
| Infineon Technologies | 1 $27.7963 5 $25.9432 10 $25.48 50 $25.0167 100 $25.0167 250 $25.0167 | Infineon NChannel EnhancedMOSTube CoolSiCseries, Vds=1200 V, 36 A, TO-247encapsulation, Through hole mounting, 3Pin | - | - | - | - | 36A (Tc) | - | - | - | - | 1200 V | 18V | - | - | - | - | - | 31 nC @ 18 V | 1060 pF @ 800 V | - | - | - | 1 (Unlimited) | - | Through Hole | - | - | - | -55°C ~ 175°C (TJ) | - | TO-247-3 | Tube | - | 150W (Tc) | 78mOhm @ 13A, 18V | 14311616 | - | CoolSiC™ | PG-TO247-3-41 | SiCFET (Silicon Carbide) | 5.7V @ 5.6mA | +23V, -7V | - | |
| VBsemi | 2 $3.1954 30 $3.0906 60 $3.012 100 $2.9596 | TSMC wafer,JCET (Jiangsu Changjiang Electronics Technology)。TO247;NChannel,1200V,30A,RDS(ON)=80mΩ@VGS=18V,VGS= -10/+22V,Vth=2~4V;、High Power Density、;、、、、。 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | TO-247-3 | - | - | - | - | - | - | - | - | - | - | - | - | AIMW120R060M1HXKSA1-VB VBsemi | |
| VBsemi | 2 $3.1954 30 $3.0906 60 $3.012 100 $2.9596 | TSMC wafer,JCET (Jiangsu Changjiang Electronics Technology)。TO247;NChannel,1200V,30A,RDS(ON)=80mΩ@VGS=18V,VGS= -10/+22V,Vth=2~4V;、High Power Density、;、、、、。 | Industrial | - | - | - | - | - | 60A | 40mΩ@ 30V | 1.2KV | - | - | 1individualNChannel | - | - | - | 10V~22V | - | - | - | - | - | - | Through hole mounting | - | -55℃~150℃ | - | - | - | TO-247 | - | - | - | - | - | - | - | - | - | - | - | - | AIMW120R080M1-VB VBsemi | |
| HXY MOSFET | 30 $3.1535 60 $3.101 90 $3.0221 | ID:36A, VDSS:1200V, RDON:80mΩ@VGS=20V, N-Ch MOSFET | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | TO-247 | - | - | - | - | - | - | - | - | - | - | - | - | - | |
| Infineon Technologies | 50 $10.5702 100 $10.3404 300 $10.2638 500 $10.1872 1,000 $10.034 5,000 $9.9574 | Infineon NChannel EnhancedMOSTube CoolSiCseries, Vds=1200 V, 34 A, TO-247encapsulation, Through hole mounting, 3Pin | - | - | - | - | 33A (Tc) | - | - | - | - | 1200 V | 15V | - | - | - | - | - | 28 nC @ 15 V | 1060 pF @ 800 V | - | - | - | 1 (Unlimited) | - | Through Hole | - | - | - | -55°C ~ 175°C (TJ) | - | TO-247-3 | Tube | - | 150W (Tc) | 104mOhm @ 13A, 15V | 14311636 | - | CoolSiC™ | PG-TO247-3-41 | SiCFET (Silicon Carbide) | 5.7V @ 5.6mA | +20V, -7V | - | |
| VBsemi | 2+ $3.1954 30+ $3.0906 60+ $3.012 100+ $2.9596 | TSMC Process, JCET Packaging. TO247 N-Ch 1200V 30A RDS(ON)=80mΩ@VGS=18V VGS -10/+22V Vth 2~4V | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | |
| Infineon Technologies | 1 $23.2451 5 $21.6954 10 $21.308 50 $20.9206 100 $20.9206 250 $20.9206 | 81nC@ 18 V 319W(Tc) 2.869nF@500V 15mΩ@ 41.5A,20V 89A 750V 5.6V@14.9mA 1individualNChannel Through hole mounting | Industrial | - | 2.869nF@500V | - | - | - | 89A | 15mΩ@ 41.5A, 20V | 750V | - | - | 1individualNChannel | - | 81nC@ 18 V | 5.6V@14.9mA | - | - | - | - | - | 319W(Tc) | - | Through hole mounting | - | - | 175℃(TJ) | -55℃(TJ) | - | - | - | - | - | - | - | - | Tube | - | - | - | - | - | AIMZA75R016M1HXKSA1 Infineon Technologies | |
| Infineon Technologies | 1 $16.7689 5 $15.0249 10 $14.7566 50 $14.4883 100 $14.4883 250 $14.4883 | 67nC@ 18 V 278W(Tc) 2.217nF@500V 18mΩ@ 32.5A,20V 75A 750V 5.6V@11.7mA 1individualNChannel Through hole mounting | Industrial | - | 2.217nF@500V | - | - | - | 75A | 18mΩ@ 32.5A, 20V | 750V | - | - | 1individualNChannel | - | 67nC@ 18 V | 5.6V@11.7mA | - | - | - | - | - | 278W(Tc) | - | Through hole mounting | - | - | 175℃(TJ) | -55℃(TJ) | - | - | - | - | - | - | - | - | Tube | - | - | - | - | - | AIMZA75R020M1HXKSA1 Infineon Technologies | |
| Infineon Technologies | 1 $22.3139 10 $19.4629 100 $17.9611 | 49nC@ 18 V 234W(Tc) 1.668nF@500V 25mΩ@ 24.5A,20V 60A 750V 5.6V@8.8mA 1individualNChannel Through hole mounting | Industrial | - | 1.668nF@500V | - | - | - | 60A | 25mΩ@ 24.5A, 20V | 750V | - | - | 1individualNChannel | - | 49nC@ 18 V | 5.6V@8.8mA | - | - | - | - | - | 234W(Tc) | - | Through hole mounting | - | - | 175℃(TJ) | -55℃(TJ) | - | - | - | - | - | - | - | - | Tube | - | - | - | - | - | AIMZA75R027M1HXKSA1 Infineon Technologies | |
| Infineon Technologies | 1 $9.2999 5 $8.9279 10 $8.1839 50 $8.1839 100 $8.0351 250 $8.0351 | 34nC@ 18 V 185W(Tc) 1.135nF@500V 37mΩ@ 16.6A,20V 47A 750V 5.6V@6mA 1individualNChannel Through hole mounting | Industrial | - | 1.135nF@500V | - | - | - | 47A | 37mΩ@ 16.6A, 20V | 750V | - | - | 1individualNChannel | - | 34nC@ 18 V | 5.6V@6mA | - | - | - | - | - | 185W(Tc) | - | Through hole mounting | - | - | 175℃(TJ) | -55℃(TJ) | - | - | - | - | - | - | - | - | Tube | - | - | - | - | - | AIMZA75R040M1HXKSA1 Infineon Technologies | |
| Infineon Technologies | 1 $7.9176 5 $7.9176 10 $6.9675 50 $6.9675 100 $6.8408 250 $6.8408 | 23nC@ 18 V 144W(Tc) 779pF@500V 55mΩ@ 11.1A,20V 32A 750V 5.6V@4mA 1individualNChannel Through hole mounting | Industrial | - | 779pF@500V | - | - | - | 32A | 55mΩ@ 11.1A, 20V | 750V | - | - | 1individualNChannel | - | 23nC@ 18 V | 5.6V@4mA | - | - | - | - | - | 144W(Tc) | - | Through hole mounting | - | - | 175℃(TJ) | -55℃(TJ) | - | - | - | - | - | - | - | - | Tube | - | - | - | - | - | AIMZA75R060M1HXKSA1 Infineon Technologies | |
| Infineon Technologies | 1+ $4.2923 10+ $3.7772 100+ $3.7085 500+ $3.7085 1,000+ $3.7085 | MOSFET N-Channel 13nC@18V 86W(Tc) 351pF@500V 129mΩ@4.7A,20V 16A 750V 5.6V@1.7mA TH | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | |
| VBsemi | 1 $14.9119 30 $14.4231 60 $14.0564 100 $13.8119 | TSMC wafer,JCET (Jiangsu Changjiang Electronics Technology)。 NChannel,1200V,100A,RDS(ON),15mΩ@18V,-10/+22Vgs(±V);2~4Vth(V)encapsulation:TO247、High Power Density、;、、、、。 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | TO-247-4L | - | - | - | - | - | - | - | - | - | - | - | - | AIMZH120R020M1T-VB VBsemi | |
| HXY MOSFET | 30 $18.0542 60 $17.7533 90 $17.3019 | ID:117A,VDSS:1200V,RDON:33mR,VGS:-4~+18V,TYPE:NChannel, | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | TO-247-4L | - | - | - | - | - | - | - | - | - | - | - | - | AIMZH120R030M1T HXY MOSFET | |
| HXY MOSFET | 30 $2.9959 60 $2.9459 90 $2.8711 | ID:69A,VDSS:1200V,RDON:59mR,TYPE:NChannel, | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | TO-247-4L | - | - | - | - | - | - | - | - | - | - | - | - | AIMZH120R060M1TXKSA1-HXY HXY MOSFET | |
| VBsemi | 2 $3.1954 30 $3.0906 60 $3.012 100 $2.9596 | TSMC wafer,JCET (Jiangsu Changjiang Electronics Technology)。TO247-4L;NChannel,1200V,30A,RDS(ON)=80mΩ@VGS=18V,VGS= -4/+22V,Vth=2~4V;、;、、。 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | TO-247-4 | - | - | - | - | - | - | - | - | - | - | - | - | AIMZH120R080M1T-VB VBsemi | |
| HXY MOSFET | 30+ $4.9038 60+ $4.822 90+ $4.6995 | N-Ch MOSFET ID=19A VDSS=1200V RDON=160mΩ VGS=20V | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | |
| VBsemi | 1 $14.9119 30 $14.4231 60 $14.0564 100 $13.8119 | TSMC wafer,JCET (Jiangsu Changjiang Electronics Technology)。 NChannel,1200V,100A,RDS(ON),15mΩ@18V,-10/+22Vgs(±V);2~4Vth(V)encapsulation:TO247、High Power Density、;、、、、。 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | TO-247-4L | - | - | - | - | - | - | - | - | - | - | - | - | AIMZHN120R020M1T-VB VBsemi | |
| Infineon Technologies | 1 $10.4518 5 $10.0337 10 $9.1975 50 $9.1975 100 $9.0303 250 $9.0303 | 43nC@ 20 V 268W(Tc) 1.264nF@800V 50mΩ@ 20A,20V 1.2KV 5.1V@6.4mA 1individualNChannel Through hole mounting | Industrial | - | 1.264nF@800V | - | - | - | - | 50mΩ@ 20A, 20V | 1.2KV | - | - | 1individualNChannel | - | 43nC@ 20 V | 5.1V@6.4mA | - | - | - | - | - | 268W(Tc) | - | Through hole mounting | - | - | 175℃(TJ) | -55℃(TJ) | - | - | - | - | - | - | - | - | Tube | - | - | - | - | - | AIMZHN120R040M1TXKSA1 Infineon Technologies | |
| VBsemi | 2 $3.1954 30 $3.0906 60 $3.012 100 $2.9596 | TSMC wafer,JCET (Jiangsu Changjiang Electronics Technology)。TO247-4L;NChannel,1200V,30A,RDS(ON)=80mΩ@VGS=18V,VGS= -4/+22V,Vth=2~4V;、;、、。 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | TO-247-4 | - | - | - | - | - | - | - | - | - | - | - | - | AIMZHN120R060M1T-VB VBsemi | |
| VBsemi | 2 $3.1954 30 $3.0906 60 $3.012 100 $2.9596 | TSMC wafer,JCET (Jiangsu Changjiang Electronics Technology)。TO247-4L;NChannel,1200V,30A,RDS(ON)=80mΩ@VGS=18V,VGS= -4/+22V,Vth=2~4V;、;、、。 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | TO-247-4 | - | - | - | - | - | - | - | - | - | - | - | - | AIMZHN120R060M1TXKSA1-VB VBsemi | |
| VBsemi | 2 $3.1954 30 $3.0906 60 $3.012 100 $2.9596 | TSMC wafer,JCET (Jiangsu Changjiang Electronics Technology)。TO247-4L;NChannel,1200V,30A,RDS(ON)=80mΩ@VGS=18V,VGS= -4/+22V,Vth=2~4V;、;、、。 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | TO-247-4 | - | - | - | - | - | - | - | - | - | - | - | - | AIMZHN120R080M1TXKSA1-VB VBsemi | |
| HXY MOSFET | 30 $3.2261 60 $3.1723 90 $3.0917 | N-Ch MOSFET 650V 99A 26mΩ@VGS -10/+25V | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | TO-247-4L | - | - | - | - | - | - | - | - | - | - | - | - | AMR027V065H2-HXY HXY MOSFET | |
| HXY MOSFET | 2,500+ $0.6306 5,000+ $0.6201 7,500+ $0.6043 | N-Ch MOSFET, ID=10.2A, VDSS=800V, RDON=550mΩ, VGS=-8/+20V | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | |
| VBsemi | 2 $2.3434 50 $2.2665 100 $2.2088 200 $2.1704 | TSMC wafer,JCET (Jiangsu Changjiang Electronics Technology)。TO247;NChannel,650V,30A,RDS(ON)=70mΩ@VGS=18V,VGS= -10/+20V,Vth=2~5V;、High Power Density、;、AI、。 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | TO-247-3 | - | - | - | - | - | - | - | - | - | - | - | - | AOK065V65X2-VB VBsemi | |
| Alpha & Omega Semiconductor | 10 $6.2119 200 $6.1125 1,000 $5.9634 5,000 $5.864 | 166nC@ 15 V 348W(Tc) 5.18nF@800V 28mΩ@ 27A,15V 1.2KV 2.8V@27mA 1individualNChannel TO-247-4L Through hole mounting | Industrial | - | 5.18nF@800V | - | - | - | - | 28mΩ@ 27A, 15V | 1.2KV | - | - | 1individualNChannel | - | 166nC@ 15 V | 2.8V@27mA | - | - | - | - | - | 348W(Tc) | - | Through hole mounting | - | - | 175℃(TJ) | -55℃(TJ) | - | TO-247-4L | - | - | - | - | - | - | Tube | - | - | - | - | - | AOM020V120X2 Alpha & Omega Semiconductor | |
| Alpha & Omega Semiconductor | 10 $5.3135 200 $5.2284 1,000 $5.1009 5,000 $5.0158 | 104nC@ 15 V 300W(Ta) 2.908nF@800V 43mΩ@ 20A,15V 1.2KV 2.8V@17.5mA 1individualNChannel TO-247-4L Through hole mounting | - | AOM033 | - | - | 68A (Tc) | - | - | - | - | 1200 V | 15V | - | - | - | - | - | 104 nC @ 15 V | 2908 pF @ 800 V | - | - | - | - | - | Through Hole | - | - | - | -55°C ~ 175°C (TJ) | - | TO-247-4 | Tube | - | 300W (Ta) | 43mOhm @ 20A, 15V | - | - | - | TO-247-4L | SiC (Silicon Carbide Junction Transistor) | 2.8V @ 17.5mA | +15V, -5V | - | |
| Alpha & Omega Semiconductor | 10 $4.5628 200 $4.4898 1,000 $4.3803 5,000 $4.3073 | 62.3nC@ 15 V 187.5W(Ta) 1.716nF@800V 85mΩ@ 10A,15V 1.2KV 3.5V@10mA 1individualNChannel TO-247-4L Through hole mounting | - | AOM065 | - | - | 40.3A (Tc) | - | - | - | - | 1200 V | 15V | - | - | - | - | - | 62.3 nC @ 15 V | 1716 pF @ 800 V | - | - | - | - | - | Through Hole | - | - | - | -55°C ~ 175°C (TJ) | - | TO-247-4 | Tube | - | 187.5W (Ta) | 85mOhm @ 10A, 15V | - | - | - | TO-247-4L | SiC (Silicon Carbide Junction Transistor) | 3.5V @ 10mA | +15V, -5V | - | |
| HXY MOSFET | 50 $0.8988 100 $0.8838 150 $0.8613 | ID:15A VDSS:650V RDON:260mΩ VGS:-5~+16V N-Ch MOSFET | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | TO-220F | - | - | - | - | - | - | - | - | - | - | - | - | AOTF11S65L HXY MOSFET | |
| HXY MOSFET | 50 $0.5242 100 $0.5156 150 $0.5025 | N-Ch MOSFET ID 15A VDSS 650V RDON 260mΩ VGS -5~+16V | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | TO-220F | - | - | - | - | - | - | - | - | - | - | - | - | AOTF18N65L HXY MOSFET | |
| HXY MOSFET | 50 $1.0486 100 $1.0311 150 $1.0049 | MOSFET, 20A, 650V, 160mΩ, Vgs -5~+16V, N-Channel | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | TO-220F | - | - | - | - | - | - | - | - | - | - | - | - | AOTF25S65 HXY MOSFET | |
| HXY MOSFET | 50 $0.6465 100 $0.6357 150 $0.6196 | MOSFET, 20A, 650V, 160mΩ, Vgs -5~+16V, N-Channel | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | TO-220F | - | - | - | - | - | - | - | - | - | - | - | - | APC65R210FMF HXY MOSFET | |
| HXY MOSFET | 2,500 $0.2996 5,000 $0.2946 7,500 $0.2871 | N-Ch MOSFET ID 15A VDSS 650V RDON 260mΩ VGS -5~+16V | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | TO-252 | - | - | - | - | - | - | - | - | - | - | - | - | APC65R300KM HXY MOSFET | |
| VBsemi | 2 $3.1954 30 $3.0906 60 $3.012 100 $2.9596 | TSMC wafer,JCET (Jiangsu Changjiang Electronics Technology)。TO247;NChannel,1200V,30A,RDS(ON)=80mΩ@VGS=18V,VGS= -10/+22V,Vth=2~4V;、High Power Density、;、、、、。 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | TO-247-3 | - | - | - | - | - | - | - | - | - | - | - | - | APT25SM120B-VB VBsemi | |
| VBsemi | 2 $3.1954 30 $3.0906 60 $3.012 100 $2.9596 | TSMC wafer,JCET (Jiangsu Changjiang Electronics Technology)。TO247;NChannel,1200V,30A,RDS(ON)=80mΩ@VGS=18V,VGS= -10/+22V,Vth=2~4V;、High Power Density、;、、、、。 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | TO-247-3 | - | - | - | - | - | - | - | - | - | - | - | - | APT40SM120B-VB VBsemi | |
| VBsemi | 2 $3.8345 30 $3.7088 60 $3.6144 100 $3.5516 | TSMC wafer,JCET (Jiangsu Changjiang Electronics Technology)。TO247-4L;NChannel,1200V,65A,RDS(ON)=35mΩ@VGS=18V,VGS= -10/+22V,Vth=2~4V;Suitable for high power、、;、AI、industryAI。 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | TO-247-3 | - | - | - | - | - | - | - | - | - | - | - | - | APT80SM120B-VB VBsemi | |
| HXY MOSFET | 30 $20.0251 60 $19.6914 90 $19.1907 | ID:80A,VDSS:1200V,RDON:25mR,TYPE:NChannel, | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | TO-247 | - | - | - | - | - | - | - | - | - | - | - | - | AS1M025120P HXY MOSFET | |
| VBsemi | 1 $14.9119 30 $14.4231 60 $14.0564 100 $13.8119 | TSMC wafer,JCET (Jiangsu Changjiang Electronics Technology)。TO247;NChannel,1200V;100A;RDS(ON)=16mΩ@VGS=18V,VGS=-10/+22V;Vth=2~4V;、、;、、、。 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | TO-247-3 | - | - | - | - | - | - | - | - | - | - | - | - | AS1M025120P-VB VBsemi | |
| HXY MOSFET | 30 $20.0251 60 $19.6914 90 $19.1907 | ID:80A,VDSS:1200V,RDON:25mR,TYPE:NChannel, | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | TO-247-4L | - | - | - | - | - | - | - | - | - | - | - | - | - | |
| HXY MOSFET | 30 $10.8798 60 $10.6985 90 $10.4265 | N-Ch MOSFET ID=60A VDSS=1200V RDON=40mR | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | TO-247-4L | - | - | - | - | - | - | - | - | - | - | - | - | AS1M040120T HXY MOSFET | |
| VBsemi | 2 $3.8345 30 $3.7088 60 $3.6144 100 $3.5516 | TSMC wafer,JCET (Jiangsu Changjiang Electronics Technology)。TO247-4L;NChannel,1200V,65A,RDS(on)35mΩ@VGS=18Vtyp,VGS=-10/+22V,Vth=2~4V;、High Power Density、;、、。 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | TO-247-4 | - | - | - | - | - | - | - | - | - | - | - | - | AS1M040120T-VB VBsemi | |
| VBsemi | 2 $3.1954 30 $3.0906 60 $3.012 100 $2.9596 | TSMC wafer,JCET (Jiangsu Changjiang Electronics Technology)。TO247;NChannel,1200V,30A,RDS(ON)=80mΩ@VGS=18V,VGS= -10/+22V,Vth=2~4V;、High Power Density、;、、、、。 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | TO-247-3 | - | - | - | - | - | - | - | - | - | - | - | - | AS1M080120P-VB VBsemi | |
| HXY MOSFET | 30+ $7.0955 60+ $6.9773 90+ $6.7999 | N-Channel MOSFET, ID 60A, VDSS 1200V, RDON 40mΩ | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | |
| VBsemi | 2 $3.8345 30 $3.7088 60 $3.6144 100 $3.5516 | TSMC wafer,JCET (Jiangsu Changjiang Electronics Technology)。TO247-4L;NChannel,1200V,65A,RDS(ON)=35mΩ@VGS=18V,VGS= -10/+22V,Vth=2~4V;Suitable for high power、、;、AI、industryAI。 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | TO-247-3 | - | - | - | - | - | - | - | - | - | - | - | - | AS2M040120P-VB VBsemi | |
| HXY MOSFET | 50 $0.4258 100 $0.4187 150 $0.408 | ID:20A, VDSS:650V, RDON:160mΩ, VGS:-5~+16V, Type: N-Ch | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | TO-220F | - | - | - | - | - | - | - | - | - | - | - | - | ASA60R210E HXY MOSFET | |
| HXY MOSFET | 100 $0.3312 200 $0.3256 300 $0.3173 | ID:15A VDSS:650V RDON:260mΩ VGS:-5~+16V N-Ch MOSFET | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | TO-220F | - | - | - | - | - | - | - | - | - | - | - | - | ASA60R280E HXY MOSFET | |
| HXY MOSFET | 100 $0.3312 200 $0.3256 300 $0.3173 | ID:15A VDSS:650V RDON:260mΩ VGS:-5~+16V N-Ch MOSFET | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | TO-220F | - | - | - | - | - | - | - | - | - | - | - | - | ASA60R330E HXY MOSFET | |
| HXY MOSFET | 50 $0.5046 100 $0.4962 150 $0.4835 | MOSFET 20A 650V 160mΩ VGS -5~+16V N-Channel | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | TO-220F | - | - | - | - | - | - | - | - | - | - | - | - | - | |
| HXY MOSFET | 30 $13.5604 60 $13.3343 90 $12.9953 | ID:18A,VDSS:1200V,RDON:160mR,TYPE:NChannel, | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | TO-247 | - | - | - | - | - | - | - | - | - | - | - | - | B1M160120HC HXY MOSFET | |
| HXY MOSFET | 30 $2.8382 60 $2.7909 90 $2.7199 | N-Ch MOSFET ID 63A VDSS 1200V RDON 32mΩ | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | TO-247-4L | - | - | - | - | - | - | - | - | - | - | - | - | BCZ120N32W1 HXY MOSFET | |
| ROHM | 1 $701.7872 5 $701.7872 | ROHM NChannelMOSTube, Vds=1200 V, 180 A, Tray Package, Thread | - | BSM180 | - | - | 180A (Tc) | - | - | - | - | 1200 V | - | - | - | - | - | - | - | 9000 pF @ 10 V | - | - | - | 1 (Unlimited) | - | Chassis Mount | - | - | - | -40°C ~ 150°C (TJ) | - | Module | Bulk | - | 880W (Tc) | - | 12142070 | - | - | Module | SiCFET (Silicon Carbide) | 5.6V @ 50mA | +22V, -4V | - | |
| ROHM | 1 $1516.874 20 $882.5449 40 $827.3858 | ROHM NChannelMOSTube, Vds=1200 V, 204 A, Module packaging, Thread | - | BSM180 | - | 2 N-Channel (Half Bridge) | 204A (Tc) | - | - | - | - | 1200V (1.2kV) | - | - | - | - | - | - | - | 18000pF @ 10V | - | - | - | 1 (Unlimited) | - | Chassis Mount | - | - | - | -40°C ~ 150°C (TJ) | - | Module | Bulk | 1360W (Tc) | - | - | 12142061 | - | - | Module | Silicon Carbide (SiC) | 4V @ 35.2mA | - | - | |
| ROHM | 1 $1456.6076 24 $869.2658 60 $751.7975 120 $704.8102 | ROHM NChannel EnhancedSiC Power module BSMseries, Vds=1200 V, 180 A, Cencapsulation, surface mount, 4Pin | - | BSM180 | - | 2 N-Channel (Dual) | 180A (Tc) | - | - | - | - | 1200V (1.2kV) | - | - | - | - | - | - | - | 900pF @ 10V | - | - | - | 1 (Unlimited) | - | Surface Mount | - | - | - | 175°C (TJ) | - | Module | Bulk | 880W | - | - | 5766936 | - | - | Module | Silicon Carbide (SiC) | 5.6V @ 50mA | - | - | |
| ROHM | 1 $1302.0306 | ROHM NChannelMOSTube, Vds=1700 v, 250 A, Bulk Packaging, Thread | - | BSM250 | - | 2 N-Channel (Half Bridge) | 250A (Tc) | - | - | - | - | 1700V (1.7kV) | - | - | - | - | - | - | - | 30000pF @ 10V | - | - | - | 1 (Unlimited) | - | Chassis Mount | - | - | - | -40°C ~ 150°C (TJ) | - | Module | Box | 1800W (Tc) | - | - | - | - | - | Module | Silicon Carbide (SiC) | 4V @ 66mA | - | - | |
| ROHM | 1 $2247.2207 20 $1307.4739 40 $1225.7568 | ROHM NChannel EnhancedSiC Power module BSMseries, Vds=1200 V, 300 A, Cencapsulation, surface mount, 4Pin | - | BSM300 | - | 2 N-Channel (Half Bridge) | 300A (Tc) | - | - | - | - | 1200V (1.2kV) | - | - | - | - | - | - | - | 35000pF @ 10V | - | - | - | 1 (Unlimited) | - | Chassis Mount | - | - | - | -40°C ~ 150°C (TJ) | - | Module | Tray | 1875W | - | - | - | - | - | Module | Silicon Carbide (SiC) | 4V @ 68mA | - | - | |
| ROHM | 1 $850.0576 | 925W 30nF@ 10V 1.2KV 21V | Industrial | - | 30nF@ 10V | - | - | - | - | - | 1.2KV | - | - | - | - | - | - | 21V | - | - | - | - | 925W | - | - | - | -40℃~150℃ | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | |
| ROHM | 1 $3085.9677 | ROHM NChannelMOSTube, Vds=1200 V, 400 A, Bulk Packaging, Thread | - | BSM400 | - | 2 N-Channel (Half Bridge) | 400A (Tc) | - | - | - | - | 1200V (1.2kV) | - | - | - | - | - | - | - | 38000pF @ 10V | - | - | - | 1 (Unlimited) | - | - | - | - | - | -40°C ~ 150°C (TJ) | - | Module | Bulk | 2450W (Tc) | - | - | - | - | - | Module | Silicon Carbide (SiC) | 4V @ 85mA | - | - | |
| ROHM | 1+ $1455.3154 | ROHM N-Ch MOSFET Vds=1200V 358A Module Package Threaded | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | |
| ROHM | 1+ $1058.56 | 1.45kW 44nF@10V 1.2kV 21V | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | |
| ROHM | 1 $1388.3738 | 1.78KW 59nF@ 10V 1.2KV 21V | - | BSM600 | - | 2 N-Channel | 567A (Tc) | - | - | - | - | 1200V (1.2kV) | - | - | Standard | - | - | - | - | 59000pF @ 10V | - | - | - | 1 (Unlimited) | - | Chassis Mount | - | - | - | 175°C (TJ) | - | Module | Box | 1.78kW (Tc) | - | - | 19106453 | - | - | Module | Silicon Carbide (SiC) | 4.8V @ 291.2mA | - | - | |
| HXY MOSFET | 12 $48.0919 24 $47.2904 36 $46.0881 | N-Ch MOSFET ID 125A VDSS 1200V RDON 15mΩ | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | SOT-227 | - | - | - | - | - | - | - | - | - | - | - | - | - | |
| HXY MOSFET | 30+ $2.9959 60+ $2.9459 90+ $2.8711 | ID:7A, VDSS:1200V, RDON:320mΩ, N-Channel | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | |
| HXY MOSFET | 800 $8.0416 1,600 $7.9075 2,400 $7.7065 | ID:68A, VDSS:1200V, RDON:40mR, TYPE:N-Channel | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | TO-263-7L | - | - | - | - | - | - | - | - | - | - | - | - | - | |
| HXY MOSFET | 30+ $4.415 60+ $4.3414 90+ $4.2311 | N-Ch MOSFET, ID=40A, VDSS=1200V, RDON=60mΩ | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | |
| HXY MOSFET | 30 $6.3072 60 $6.202 90 $6.0443 | ID:49A N-Channel MOSFET VDSS:650V RDON:45mΩ VGS:-4/+18V | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | TO-247-4L | - | - | - | - | - | - | - | - | - | - | - | - | C2M0040065K HXY MOSFET | |
| HXY MOSFET | 30 $5.5188 60 $5.4267 90 $5.2888 | MOSFET N-Channel 55A 1200V 40mΩ@18V | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | TO-247 | - | - | - | - | - | - | - | - | - | - | - | - | - | |
| VBsemi | 2 $3.8345 30 $3.7088 60 $3.6144 100 $3.5516 | TSMC wafer,JCET (Jiangsu Changjiang Electronics Technology)。TO247-4L;NChannel,1200V,65A,RDS(ON)=35mΩ@VGS=18V,VGS= -10/+22V,Vth=2~4V;Suitable for high power、、;、AI、industryAI。 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | TO-247-3 | - | - | - | - | - | - | - | - | - | - | - | - | C2M0040120D-VB VBsemi | |
| HXY MOSFET | 30+ $6.3072 60+ $6.202 90+ $6.0443 | N-Ch MOSFET 78A 1200V 40mΩ@18V | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | |
| Wolfspeed | 30 $118.915 60 $114.1581 | Wolfspeed NChannel EnhancedMOSTube, Vds=1700 V, 72 A, TO-247encapsulation, Through hole mounting, 3Pin | - | C2M0045170 | - | - | 72A (Tc) | - | - | - | - | 1700 V | 20V | - | - | - | - | - | 188 nC @ 20 V | 3672 pF @ 1000 V | - | - | - | Not Applicable | - | Through Hole | - | - | - | -40°C ~ 150°C (TJ) | - | TO-247-3 | Tube | - | 520W (Tc) | 70mOhm @ 50A, 20V | 6148740 | - | C2M™ | TO-247-3 | SiCFET (Silicon Carbide) | 4V @ 18mA | +25V, -10V | - | |
| HXY MOSFET | 30 $21.7596 60 $21.3969 90 $20.8529 | ID:72A,VDSS:1700V,RDON:45mR,VGS:20V,TYPE:NChannel, | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | TO-247 | - | - | - | - | - | - | - | - | - | - | - | - | - | |
| Wolfspeed | 30 $35.3711 | Wolfspeed NChannel EnhancedMOSTube, Vds=1200 V, 31 A, TO-247encapsulation, Through hole mounting, 3Pin | - | C2M0080120 | - | - | 36A (Tc) | - | - | - | - | 1200 V | 20V | - | - | - | - | - | 62 nC @ 5 V | 950 pF @ 1000 V | - | - | - | 1 (Unlimited) | - | Through Hole | - | - | - | -55°C ~ 150°C (TJ) | - | TO-247-3 | Bulk | - | 192W (Tc) | 98mOhm @ 20A, 20V | - | - | C2M™ | TO-247-3 | SiCFET (Silicon Carbide) | 4V @ 5mA | +25V, -10V | - | |
| CREE | 1+ $28.9319 10+ $27.8372 30+ $27.0031 100+ $26.0648 | Discrete MOSFET, N-Ch, 1-Ch, 1.2kV, 3.1V/5V/25V, 80mΩ, 31.6A, 100μA, 94nC, 208W, 950pF@1000V, 192W, TO-247-3, TH, 16.13mm × 5.21mm × 21.1mm | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | |
| VBsemi | 2 $3.1954 30 $3.0906 60 $3.012 100 $2.9596 | TSMC wafer,JCET (Jiangsu Changjiang Electronics Technology)。TO247;NChannel,1200V,30A,RDS(ON)=80mΩ@VGS=18V,VGS= -10/+22V,Vth=2~4V;、High Power Density、;、、、、。 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | TO-247-3 | - | - | - | - | - | - | - | - | - | - | - | - | C2M0080120D-VB VBsemi | |
| HXY MOSFET | 30 $2.8382 60 $2.7909 90 $2.7199 | ID:36A, VDSS:1200V, RDON:80mΩ@VGS=20V, N-Ch MOSFET | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | TO-247-4L | - | - | - | - | - | - | - | - | - | - | - | - | - | |
| HXY MOSFET | 30 $2.9171 60 $2.8684 90 $2.7955 | N-Ch MOSFET, ID=18A, VDSS=1200V, RDON=160mΩ, VGS=20V | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | TO-247 | - | - | - | - | - | - | - | - | - | - | - | - | - | |
| CREE | 1 $6.8589 10 $6.4554 50 $6.2353 100 $6.0967 | 100μA 32.6nC 125W 1.2KV 40W 1 160mΩ 17.7A 1.2KV 2.5V 10V，25V Freestanding 1individualNChannel TO-247-3 Through hole mounting | Industrial | - | - | Freestanding | - | - | 17.7A | 160mΩ | 1.2KV | - | - | 1individualNChannel | - | 32.6nC | 2.5V | 10V, 25V | - | - | - | 40W | 125W | - | Through hole mounting | - | -55℃~150℃ | - | - | - | TO-247-3 | - | - | - | - | - | - | Tube | - | - | - | - | - | C2M0160120D CREE | |
| Wolfspeed | 30 $13.2591 150 $12.9934 | Wolfspeed NChannel EnhancedMOSTube, Vds=1200 V, 19 A, TO-247encapsulation, Through hole mounting, 3Pin | - | C2M0160120 | - | - | 19A (Tc) | - | - | - | - | 1200 V | 20V | - | - | - | - | - | 32.6 nC @ 20 V | 527 pF @ 800 V | - | - | - | 1 (Unlimited) | - | Through Hole | - | - | - | -55°C ~ 150°C (TJ) | - | TO-247-3 | Tube | - | 125W (Tc) | 196mOhm @ 10A, 20V | 4425548 | - | Z-FET™ | TO-247-3 | SiCFET (Silicon Carbide) | 2.5V @ 500µA | +25V, -10V | - | |
| HXY MOSFET | 30 $2.2075 60 $2.1707 90 $2.1155 | ID:19A, VDSS:1200V, RDON:160mΩ, VGS:20V, N-Ch MOSFET | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | TO-247-4L | - | - | - | - | - | - | - | - | - | - | - | - | C2M0160120K HXY MOSFET | |
| HXY MOSFET | 30 $1.8724 60 $1.8412 90 $1.7944 | ID:7A, VDSS:1200V, RDON:320mR, TYPE:N-Channel | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | TO-247 | - | - | - | - | - | - | - | - | - | - | - | - | C2M0280120D-HXY HXY MOSFET | |
| HXY MOSFET | 30 $3.4689 60 $3.4111 90 $3.3244 | ID:7A,VDSS:1700V,RDON:650mR,TYPE:NChannel, | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | TO-247 | - | - | - | - | - | - | - | - | - | - | - | - | - | |
| HXY MOSFET | 30 $1.5295 60 $1.504 90 $1.4658 | N-Ch MOSFET ID 5A VDSS 1700V RDON 1000mR VGS 20V | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | TO-247 | - | - | - | - | - | - | - | - | - | - | - | - | - | |
| Wolfspeed | 14 $12.2689 26 $12.0815 | Wolfspeed NChannel EnhancedMOSTube, Vds=1700 V, 5.3 A, D2PAK (TO-263)encapsulation, surface mount, 7Pin | - | C2M1000170 | - | - | 5.3A (Tc) | - | - | - | - | 1700 V | 20V | - | - | - | - | - | 13 nC @ 20 V | 200 pF @ 1000 V | - | - | - | 3 (168 Hours) | - | Surface Mount | - | - | - | -55°C ~ 150°C (TJ) | - | TO-263-7 (Straight Leads) | Bulk | - | 78W (Tc) | 1.4Ohm @ 2A, 20V | - | - | C2M™ | D2PAK (7-Lead) | SiCFET (Silicon Carbide) | 4V @ 500µA | +25V, -10V | - |
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