Manufacturer 0
Base Product Number 0
Ciss Max Input Capacitance @ Vds 0
Current-Continuous Drain (Id) @25°C 0
Current - Test 0
Drain Current 0
Drain Source Resistance 0
Drain Source Voltage 0
Drain to Source Voltage (Vdss) 0
Drive Voltage (Max Rds On, Min Rds On) 0
FET Type 0
Frequency 0
Gain 0
Gate Charge 0
Gate Source Threshold Voltage 0
Gate Source Voltage 0
Gate Charge (Qg) (Max) @ Vgs 0
Input Capacitance (Ciss) (Max) @ Vds 0
Length/Width/Height 0
Max Power Dissipation 0
Moisture Sensitivity Level (MSL) 0
Mounting Type 0
Mounting Type 0
Operating Temperature 0
Operating Temperature (Max) 0
Operating Temperature (Min) 0
Operating Temperature 0
Package / Case (Metric) 0
Package/Case 0
Packaging 0
Power - Output 0
Power Dissipation (Max) 0
Product Status 0
Rds On (Max) @ Id, Vgs 0
Rid 0
SPM 0
Series 0
Supplier Device Package 0
Technology 0
Test Frequency 0
Vgs(th) (Max) @ Id 0
Vgs (Max) 0
Voltage-Rated 0
Voltage-Test 0
Voltage - Supply 0
datasheet 0
232 Results
| Part Number | Manufacturer | Price | Description | Base Product Number | Ciss Max Input Capacitance @ Vds | Current-Continuous Drain (Id) @25°C | Current - Test | Drain Current | Drain Source Resistance | Drain Source Voltage | Drain to Source Voltage (Vdss) | Drive Voltage (Max Rds On, Min Rds On) | FET Type | Frequency | Gain | Gate Charge | Gate Source Threshold Voltage | Gate Source Voltage | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Length/Width/Height | Max Power Dissipation | Moisture Sensitivity Level (MSL) | Mounting Type | Mounting Type | Operating Temperature | Operating Temperature (Max) | Operating Temperature (Min) | Operating Temperature | Package / Case (Metric) | Package/Case | Packaging | Power - Output | Power Dissipation (Max) | Product Status | Rds On (Max) @ Id, Vgs | Rid | SPM | Series | Supplier Device Package | Technology | Test Frequency | Vgs(th) (Max) @ Id | Vgs (Max) | Voltage-Rated | Voltage-Test | Voltage - Supply | datasheet |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| NXP Semiconductors | 1 $94.9089 25 $91.7026 50 $88.4962 100 $86.5723 300 $85.9311 500 $85.2898 1,000 $84.0072 5,000 $83.366 | TVS Diode NI-400S-2S 125V SMD 4.14mm H | A2G22 | - | - | 200 mA | - | - | - | - | - | - | 1.805GHz ~ 2.2GHz | 17.7dB | - | - | - | - | - | - | - | Not Applicable | - | Surface Mount | - | - | - | - | - | NI-400S-2S | Tape & Reel (TR) | 52dBm | - | - | - | - | - | - | NI-400S-2S | GaN | - | - | - | 125 V | 48 V | - | - | |
| NXP Semiconductors | 1 $470.4 5 $459.375 10 $448.35 | - | - | - | - | 40 mA | - | - | - | - | - | - | 100MHz ~ 2.69GHz | 13.9dB | - | - | - | - | - | - | - | 3 (168 Hours) | - | Surface Mount | - | - | - | - | - | 6-LDFN Exposed Pad | Bulk | 8W | - | - | - | - | - | - | 6-PDFN (7x6.5) | GaN | - | - | - | 125 V | 48 V | - | - | |
| NXP Semiconductors | 20,000 $33.4282 | 0V 125V | - | - | - | 40 mA | - | - | - | - | - | - | 100MHz ~ 2.69GHz | 13.9dB | - | - | - | - | - | - | - | 3 (168 Hours) | - | Surface Mount | - | - | - | - | - | 6-LDFN Exposed Pad | - | 8W | - | - | - | 14567009 | - | - | 6-PDFN (7x6.5) | GaN | - | - | - | 125 V | 48 V | - | - | |
| NXP Semiconductors | 1 $106.7017 25 $103.0969 50 $99.4921 100 $97.3293 300 $96.6083 500 $95.8873 1,000 $94.4454 5,000 $93.7245 | 2 8V 2.3V 125V 8.04mA 2individualNChannel NI-780S-4L SMD mount | A3G35 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | Not Applicable | - | - | - | - | - | - | - | - | Tape & Reel (TR) | - | - | - | - | 10815436 | - | * | - | - | - | - | - | - | - | - | - | |
| NXP Semiconductors | 3,500 $186.971 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | SMD mount | - | - | - | - | - | OM-780-4S4S | - | - | - | - | - | - | - | bulk | - | - | - | - | - | - | - | - | - | - | |
| NXP Semiconductors | 3,750 $176.3986 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | SMD mount | - | - | - | - | - | OM-780-4S4S | - | - | - | - | - | - | - | bulk | - | - | - | - | - | - | - | - | - | - | |
| NXP Semiconductors | 45,000 $15.5008 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | SMD mount | - | - | - | - | - | - | - | - | - | - | - | - | - | Tape and reel packaging | - | - | - | - | - | - | - | - | - | - | |
| NXP Semiconductors | 45,000 $14.5001 | Air Fast RF Power GAN Transistor | - | - | - | 12 mA | - | - | - | - | - | - | 3.3GHz ~ 4.3GHz | 16.9dB | - | - | - | - | - | - | - | - | - | Surface Mount | - | - | - | - | - | 6-LDFN Exposed Pad | Tape & Reel (TR) | 24.5dBm | - | - | - | - | - | - | 6-PDFN (4x4.5) | GaN | - | - | - | 125 V | 48 V | - | - | |
| NXP Semiconductors | 25,000 $28.1002 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | SMD mount | - | - | - | - | - | - | - | - | - | - | - | - | - | Tape and reel packaging | - | - | - | - | - | - | - | - | - | - | |
| VBsemi | 5 $2.1303 50 $2.0604 100 $2.0081 200 $1.9732 | TSMC wafer,JCET (Jiangsu Changjiang Electronics Technology)。GaN (Gallium Nitride),650V,20A,RDS(ON)=110mΩ@6V,VGS=-1.7~7V,VGS(th)=1.2~2.5V,Encapsulated asDFN5x6、、,、、5G radio frequency、In-Vehicle OBC 。 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | DFN | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | AONS140V70GA1-VB VBsemi | |
| VBsemi | 5 $1.2781 50 $1.2362 100 $1.2048 200 $1.1839 | TSMC wafer,JCET (Jiangsu Changjiang Electronics Technology)。Encapsulated asDFN5x6,、、,、、5G radio frequency、In-Vehicle OBC 。 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | DFN | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | AONS190V70GA1-VB VBsemi | |
| VBsemi | 5 $1.2781 50 $1.2362 100 $1.2048 200 $1.1839 | TSMC wafer,JCET (Jiangsu Changjiang Electronics Technology)。Encapsulated asDFN5x6,、、,、、5G radio frequency、In-Vehicle OBC 。 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | DFN | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | AONS240V70GA1-VB VBsemi | |
| VBsemi | 5 $2.1303 50 $2.0604 100 $2.0081 200 $1.9732 | GaN MOSFET 650V 20A RDS(ON)=110mΩ@6V VGS=-1.7~7V VGS(th)=1.2~2.5V DFN8x8 SMD | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | DFN | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | AONV140V70GA1-VB VBsemi | |
| VBsemi | 5 $1.2781 50 $1.2362 100 $1.2048 200 $1.1839 | TSMC wafer,JCET (Jiangsu Changjiang Electronics Technology)。Encapsulated asDFN5x6,、、,、、5G radio frequency、In-Vehicle OBC 。 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | DFN | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | AONV190V70GA1-VB VBsemi | |
| VBsemi | 5 $1.2781 50 $1.2362 100 $1.2048 200 $1.1839 | TSMC wafer,JCET (Jiangsu Changjiang Electronics Technology)。Encapsulated asDFN 8x8,、、,、、5G radio frequency、In-Vehicle OBC 。 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | DFN | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | AONV240V70GA1-VB VBsemi | |
| Infineon Technologies | 1,000 $0.4244 5,000 $0.4211 | 1 2.2W 20V 8.5nC@ 4.5V，18nC@ 10V 30V 8.3mΩ@ 10V 13A Freestanding 1.35nF@ 15V 1individualNChannel SON SMD mount，glue mount 6.35mm*5.05mm*700μm | - | - | 13A (Ta), 53A (Tc) | - | - | - | - | 30 V | 4.5V, 10V | - | - | - | - | - | - | 18 nC @ 10 V | 1800 pF @ 15 V | - | - | 3 (168 Hours) | - | Surface Mount | - | - | - | -40°C ~ 150°C (TJ) | - | 3-WDSON | Bulk | - | 2.2W (Ta), 36W (Tc) | - | 8.3mOhm @ 20A, 10V | - | - | OptiMOS™ | MG-WDSON-2, CanPAK M™ | MOSFET (Metal Oxide) | - | 2.2V @ 250µA | ±20V | - | - | - | - | |
| Infineon Technologies | 100 $0.2199 | 1 360mW 20V 250V 14Ω 40mA Freestanding 1individualNChannel SOT-23-3 SMD mount，glue mount 2.9mm*1.3mm*1.1mm | - | - | - | - | 40mA | 14Ω | 250V | - | - | 1individualNChannel | - | - | - | - | 20V | - | - | 2.9mm*1.3mm*1.1mm | 360mW | - | SMD mount, glue mount | - | -55℃~150℃ | - | - | - | SOT-23-3 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | |
| Infineon Technologies | 300 $1.3173 500 $1.3075 1,000 $1.2878 5,000 $1.278 | 1 120W 20V 60nC@ 10V 55V 18mΩ@ 10V 44A Freestanding 1.38nF@ 25V 1individualNChannel TO-220 Through hole mounting 10mm*4.4mm*15.65mm | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 1 (Unlimited) | - | - | - | - | - | - | - | - | Bulk | - | - | - | - | - | - | * | - | - | - | - | - | - | - | - | - | |
| HXY MOSFET | 2,500 $1.6398 5,000 $1.6126 7,500 $1.5715 | MOSFET, ID:17A, VDSS:650V, RDSON:100mΩ, VGS:-1.4~+7V, N-Channel | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | DFN-8 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | |
| HXY MOSFET | 2,500 $1.7344 5,000 $1.7056 7,500 $1.6622 | MOSFET, ID:17A, VDSS:650V, RDSON:100mΩ, VGS:-1.4~+7V, N-Channel | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | DFN5X6-8L | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | CG65140DBA HXY MOSFET | |
| HXY MOSFET | 2,500 $4.0208 5,000 $3.9538 7,500 $3.8533 | MOSFET, N-Channel, ID 10A, VDSS 650V, RDSON 160mΩ, VGS -1.4~+7V | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | DFN-8 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | CG65200DAA HXY MOSFET | |
| HXY MOSFET | 2,500 $3.9419 5,000 $3.8763 7,500 $3.7777 | MOSFET, N-Channel, ID 10A, VDSS 650V, RDSON 160mΩ, VGS -1.4~+7V | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | DFN5X6-8L | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | |
| AMPLEON | 1 $278.6966 25 $269.2812 50 $259.8657 100 $254.2165 300 $252.3334 500 $250.4503 1,000 $246.6841 5,000 $244.8011 | - | - | - | - | 150 mA | - | - | - | - | - | - | 3GHz | 11.5dB | - | - | - | - | - | - | - | 1 (Unlimited) | - | - | - | - | - | - | - | SOT467C | Tray | 50W | - | - | - | - | - | - | SOT467C | GaN HEMT | - | - | - | 150 V | 50 V | - | - | |
| AMPLEON | 1 $159.9187 25 $154.5161 50 $149.1134 100 $145.8718 300 $144.7913 500 $143.7107 1,000 $141.5497 5,000 $140.4691 | Freestanding 1individualNChannel CDFM-2 SMD mount 3.68mm(height) | - | - | - | - | - | - | - | - | - | 1individualNChannel | - | - | - | - | - | - | - | 3.68mm(height) | - | - | SMD mount | - | - | - | - | - | CDFM-2 | - | - | - | - | New Design Not Recommended | - | - | - | - | - | - | - | - | - | - | - | - | CLF1G0060-30U AMPLEON | |
| AMPLEON | 1 $133.3417 25 $128.8369 50 $124.3321 100 $121.6293 300 $120.7283 500 $119.8273 1,000 $118.0254 5,000 $117.1245 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | base mount, SMD mount | - | - | - | - | - | CDFM-2 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | |
| AMPLEON | 1 $133.3417 25 $128.8369 50 $124.3321 100 $121.6293 300 $120.7283 500 $119.8273 1,000 $118.0254 5,000 $117.1245 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | SMD mount | - | - | - | - | - | SOT-1227B | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | |
| Efficient Power Conversion | 10 $1.3225 100 $1.1124 500 $0.8834 1,000 $0.8575 2,500 $0.7322 5,000 $0.6599 | 6V，4V 2.5V@2mA 2.5nC@ 5 V 40V 16mΩ@ 10A,5V 100μA 10A 300pF@20V 40V 1individualNChannel SMD mount | EPC20 | - | 10A (Ta) | - | - | - | - | 40 V | 5V | - | - | - | - | - | - | 2.5 nC @ 5 V | 300 pF @ 20 V | - | - | 1 (Unlimited) | - | Surface Mount | - | - | - | -40°C ~ 150°C (TJ) | - | Die | - | - | - | - | 16mOhm @ 10A, 5V | 5031691 | - | eGaN® | Die | GaNFET (Gallium Nitride) | - | 2.5V @ 2mA | +6V, -4V | - | - | - | - | |
| Efficient Power Conversion | 10 $1.173 100 $0.9955 500 $0.7754 1,000 $0.742 2,500 $0.6394 5,000 $0.5746 | 6V，4V 2.5V@ 800µA 1.15nC@ 5 V 60V 45mΩ@ 1A,5V 250μA 1A 115pF@30V 60V 1individualNChannel SMD mount 900μm*900μm*820μm | EPC20 | - | 1.7A (Ta) | - | - | - | - | 60 V | 5V | - | - | - | - | - | - | 1.15 nC @ 5 V | 115 pF @ 30 V | - | - | 1 (Unlimited) | - | Surface Mount | - | - | - | -40°C ~ 150°C (TJ) | - | Die | - | - | - | - | 45mOhm @ 1A, 5V | - | - | eGaN® | Die | GaNFET (Gallium Nitride) | - | 2.5V @ 800µA | +6V, -4V | - | - | - | - | |
| Efficient Power Conversion | 10 $2.0125 100 $1.7064 500 $1.3824 1,000 $1.3716 2,500 $1.1664 5,000 $1.1016 | 2.5V@7mA 8.5nC@ 5 V 40V 3.6mΩ@ 15A,5V 29A 1.111nF@20V 40V 1individualNChannel SMD mount 2.5mm(Length)*1.5mm(width) | EPC20 | - | 29A (Ta) | - | - | - | - | 40 V | 5V | - | - | - | - | - | - | 8.5 nC @ 5 V | 1111 pF @ 20 V | - | - | 1 (Unlimited) | - | Surface Mount | - | - | - | -40°C ~ 150°C (TJ) | - | Die | - | - | - | - | 3.6mOhm @ 15A, 5V | 13586351 | - | eGaN® | Die | GaNFET (Gallium Nitride) | - | 2.5V @ 7mA | +6V, -4V | - | - | - | - | |
| Efficient Power Conversion | 1 $5.4395 10 $2.7945 100 $2.3868 500 $2.052 2,500 $1.674 | 6V，4V 5.7nC@ 5V 170V 9mΩ@ 5V 24A 633pF@ 85V | EPC20 | - | 24A (Ta) | - | - | - | - | 170 V | 5V | - | - | - | - | - | - | 7.4 nC @ 5 V | 836 pF @ 85 V | - | - | 1 (Unlimited) | - | Surface Mount | - | - | - | -40°C ~ 150°C (TJ) | - | Die | - | - | - | - | 9mOhm @ 10A, 5V | 13405061 | - | eGaN® | Die | GaNFET (Gallium Nitride) | - | 2.5V @ 3mA | +6V, -4V | - | - | - | - | |
| Efficient Power Conversion | 10 $1.9895 100 $1.6848 500 $1.3716 1,000 $1.3608 2,500 $1.1448 5,000 $1.0908 | 6V，4V 2.5V@4mA 7.4nC@ 5 V 100V 6mΩ@ 16A,5V 851pF@50V 100V 1individualNChannel SMD mount 2.5mm(Length)*1.5mm(width) | - | - | 29A (Ta) | - | - | - | - | 100 V | 5V | - | - | - | - | - | - | 7.4 nC @ 5 V | 851 pF @ 50 V | - | - | 1 (Unlimited) | - | Surface Mount | - | - | - | -40°C ~ 150°C (TJ) | - | Die | - | - | - | - | 6mOhm @ 16A, 5V | 10211092 | - | eGaN® | Die | GaNFET (Gallium Nitride) | - | 2.5V @ 4mA | +6V, -4V | - | - | - | - | |
| Efficient Power Conversion | 10 $2.438 100 $2.0736 500 $1.7064 1,000 $1.6524 2,500 $1.4364 5,000 $1.3716 | 1 6V 2.5V@4mA 7.4nC@ 5 V 80V 6mΩ@ 16A,5V 851pF@50V 80V 1individualNChannel SMD mount 2.5mm(Length)*1.5mm(width) | EPC2204 | - | 29A (Ta) | - | - | - | - | 80 V | 5V | - | - | - | - | - | - | 7.4 nC @ 5 V | 851 pF @ 50 V | - | - | 1 (Unlimited) | - | Surface Mount | - | - | - | -40°C ~ 150°C (TJ) | - | Die | - | - | - | - | 6mOhm @ 16A, 5V | 16673011 | - | eGaN® | Die | GaNFET (Gallium Nitride) | - | 2.5V @ 4mA | +6V, -4V | - | - | - | - | |
| Efficient Power Conversion | 10 $1.978 100 $1.674 500 $1.3608 1,000 $1.3392 2,500 $1.134 5,000 $1.08 | 1 6V 2.5V@2mA 5.9nC@ 5 V 200V 22mΩ@ 14A,5V 600pF@100V 200V 1individualNChannel SMD mount 2.9mm(Length)*900μm(width) | - | - | 14A (Ta) | - | - | - | - | 200 V | 5V | - | - | - | - | - | - | 5.9 nC @ 5 V | 600 pF @ 100 V | - | - | 1 (Unlimited) | - | Surface Mount | - | - | - | -40°C ~ 150°C (TJ) | - | Die | - | - | - | - | 22mOhm @ 14A, 5V | 12821512 | - | - | Die | GaNFET (Gallium Nitride) | - | 2.5V @ 2mA | +6V, -4V | - | - | - | - | |
| Efficient Power Conversion | 1 $5.5545 10 $2.75 100 $2.4516 500 $1.9764 2,500 $1.7172 5,000 $1.6848 | 6V，4V 2.5V@ 250µA 0.45nC@ 5 V 40V 110mΩ@ 500mA,5V 2.7A 52pF@20V 1individualNChannel SMD mount | - | - | 4A (Ta) | - | - | - | - | 40 V | 5V | - | - | - | - | - | - | 0.45 nC @ 5 V | 52 pF @ 20 V | - | - | 1 (Unlimited) | - | Surface Mount | - | - | - | -40°C ~ 150°C (TJ) | - | Die | - | - | - | - | 110mOhm @ 500mA, 5V | 4971373 | - | eGaN® | Die | GaNFET (Gallium Nitride) | - | 2.5V @ 250µA | +6V, -4V | - | - | - | - | |
| GaNext | 10 $5.7346 100 $4.5876 300 $4.0142 3,000 $2.8673 | 0 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | XDFN-8 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | |
| GaNext | 10 $5.7346 100 $4.5876 300 $4.0142 1,000 $2.8673 | 0 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | TO-220AB-3L | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | G1N65R070TA-H GaNext | |
| GaNext | 10 $5.7346 100 $4.5876 300 $4.0142 2,000 $2.8673 | 0 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | G1N65R070TL-H GaNext | |
| GaNext | 10 $3.4407 100 $2.7526 300 $2.4085 3,000 $1.7204 | 0 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | XDFN-8 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | G1N65R092PD-H GaNext | |
| GaNext | 10 $3.4407 100 $2.7526 300 $2.4085 1,000 $1.7204 | 0 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | TO-220CB-3L | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | G1N65R092TA-H GaNext | |
| GaNext | 10 $3.4407 100 $2.7526 300 $2.4085 2,000 $1.7204 | 0 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | G1N65R092TL-H GaNext | |
| GaNext | 10 $10.5134 100 $8.4107 450 $5.2566 900 $4.5711 | 0 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | TO-247-3L | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | G2N65R035TB-H GaNext | |
| GaNext | 10 $10.5134 100 $8.4107 300 $7.3594 2,000 $5.2566 | 0 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | G2N65R035TL-H GaNext | |
| GaNext | 10 $10.5134 100 $8.4107 450 $5.2566 900 $4.5711 | 0 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | TO-247-4L-B | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | G2N65R035TP-H GaNext | |
| GaNext | 10 $10.5134 100 $8.4107 450 $5.2566 900 $4.5711 | 0 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | TO-247-4L | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | G2N65R035TQ-H GaNext | |
| GaNext | 10 $10.5134 100 $8.4107 300 $7.3594 2,000 $5.2566 | 0 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | G2N65R035TT-H GaNext | |
| GaNext | 10 $7.6461 100 $6.1169 450 $3.823 900 $3.3244 | 0 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | TO-247-3L | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | G2N65R050TB-H GaNext | |
| GaNext | 10 $7.6461 100 $6.1169 300 $5.3522 2,000 $3.823 | 0 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | G2N65R050TL-H GaNext | |
| GaNext | 10 $7.6461 100 $6.1169 450 $3.823 900 $3.3244 | 0 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | TO-247-4L | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | G2N65R050TQ-H GaNext | |
| GaNext | 10 $7.6461 100 $6.1169 300 $5.3522 2,000 $3.823 | 0 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | G2N65R050TT-N GaNext | |
| GaNext | 10 $5.7346 100 $4.5876 300 $4.0142 2,000 $2.8673 | 0 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | G2N65R070TT-H GaNext | |
| GaNext | 10 $3.4407 100 $2.7526 300 $2.4085 2,000 $1.7204 | 0 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | G2N65R092TT-H GaNext | |
| GaNext | 10 $2.2938 100 $1.835 300 $1.6057 3,000 $1.1469 | 0 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | HDFN-8 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | G2N70R150PD-H GaNext | |
| GaNext | 10 $2.2938 100 $1.835 300 $1.6057 1,000 $1.1469 | 0 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | TO-220CB-3L | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | G2N70R150TA-H GaNext | |
| GaNext | 10 $1.5292 100 $1.2234 300 $1.0704 3,000 $0.7646 | 0 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | PQFN-8 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | G2N70R240PB-H GaNext | |
| GaNext | 10 $1.5292 100 $1.2234 300 $1.0704 3,000 $0.7646 | 0 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | DFN5*6-8L | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | G2N70R240PC-LS GaNext | |
| GaNext | 10 $1.5292 100 $1.2234 300 $1.0704 3,000 $0.7646 | 0 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | HDFN-8 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | |
| GaNext | 10 $1.5292 100 $1.2234 300 $1.0704 3,000 $0.7646 | 0 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | HDFN-8 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | G2N70R240PD-HS GaNext | |
| GaNext | 10 $1.5292 100 $1.2234 300 $1.0704 3,000 $0.7646 | 0 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | DFN5*6-8L | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | |
| GaNext | 10 $1.5292 100 $1.2234 300 $1.0704 1,000 $0.7646 | 0 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | TO-220CB-3L | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | G2N70R240TA-H GaNext | |
| GaNext | 10 $1.5292 100 $1.2234 300 $1.0704 2,500 $0.7646 | 0 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | TO-252 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | G2N70R240TC-H GaNext | |
| GaNext | 10 $1.5292 100 $1.2234 300 $1.0704 2,500 $0.7646 | 0 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | TO-252 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | G2N70R240TC-HS GaNext | |
| GaNext | 10 $1.5292 100 $1.2234 300 $1.0704 1,000 $0.7646 | 0 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | TO-220F-3L | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | G2N70R240TF-H GaNext | |
| GaNext | 10 $1.1469 100 $0.9175 300 $0.8028 2,500 $0.5735 | 0 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | TO-252 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | G2N70R480TC-H GaNext | |
| GaNext | 10 $1.1469 100 $0.9175 300 $0.8028 2,500 $0.5735 | 0 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | TO-252 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | G2N70R480TC-HS GaNext | |
| nexperia | 1 $23.7408 5 $18.9671 10 $15.3978 50 $15.3506 100 $15.0931 250 $15.0915 | Nexperia MOSTube, Vds=650 V, 47.2 A, TO-247encapsulation, Through hole mounting | - | - | 47.2A | - | - | - | - | 650 V | 10V | - | - | - | - | - | - | 22 nC @ 10 V | 1500 pF @ 400 V | - | - | 1 (Unlimited) | - | Through Hole | - | - | - | -55°C ~ 175°C (TJ) | - | TO-247-3 | Tube | - | 187W | - | 41mOhm @ 32A, 10V | - | - | - | TO-247-3 | GaNFET (Cascode Gallium Nitride FET) | - | 4.5V @ 1mA | ±20V | - | - | - | - | |
| nexperia | 1 $29.6 25 $28.6 50 $27.6 100 $27 300 $26.8 500 $26.6 1,000 $26.2 5,000 $26 | 143W(Ta) 20V 4.5V@1mA 15nC@ 10 V 650V 60mΩ@ 25A,10V 34.5A 1nF@400V 1individualNChannel TO-247-3 Through hole mounting | GAN063 | - | 34.5A (Ta) | - | - | - | - | 650 V | 10V | - | - | - | - | - | - | 15 nC @ 10 V | 1000 pF @ 400 V | - | - | 1 (Unlimited) | - | Through Hole | - | - | - | -55°C ~ 175°C (TJ) | - | TO-247-3 | Tube | - | 143W (Ta) | - | 60mOhm @ 25A, 10V | - | - | - | TO-247-3 | GaNFET (Cascode Gallium Nitride FET) | - | 4.5V @ 1mA | ±20V | - | - | - | - | |
| nexperia | 1 $12.8974 10 $8.0912 100 $5.8204 500 $5.678 1,000 $5.2093 | 240W 7V 6.2nC@6V 650V 80mΩ@6V 225pF@400V | GAN080 | - | 29A (Ta) | - | - | - | - | 650 V | 6V | - | - | - | - | - | - | 6.2 nC @ 6 V | 225 pF @ 400 V | - | - | 3 (168 Hours) | - | Surface Mount, Wettable Flank | - | - | - | -55°C ~ 150°C (TJ) | - | 8-VDFN Exposed Pad | - | - | 240W (Ta) | - | 80mOhm @ 8A, 6V | 19109888 | - | - | DFN8080-8 | GaNFET (Gallium Nitride) | - | 2.5V @ 30.7mA | +7V, -6V | - | - | - | - | |
| nexperia | 1 $11.3581 | Transistor GaNFET N-Ch. 650V/21A TO247-3 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | |
| VBsemi | 5 $2.1303 50 $2.0604 100 $2.0081 200 $1.9732 | GaN MOSFET 650V 20A RDS(ON)=110mΩ@6V VGS=-1.7~7V VGS(th)=1.2~2.5V DFN8x8 SMD High Freq Low Loss Efficient Compact Fast Charge Server Power 5G RF OBC | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | DFN | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | GAN140-650EBE-VB VBsemi | |
| nexperia | 1 $11.8375 10 $7.2998 100 $5.2822 500 $4.7158 1,000 $4.3035 | 113W 7V 3.5nC@ 6V 650V 140mΩ@ 6V 125pF@ 400V | GAN140 | - | 17A (Ta) | - | - | - | - | 650 V | 6V | - | - | - | - | - | - | 3.5 nC @ 6 V | 125 pF @ 400 V | - | - | 3 (168 Hours) | - | Surface Mount, Wettable Flank | - | - | - | -55°C ~ 150°C (TJ) | - | 8-VDFN Exposed Pad | - | - | 113W (Ta) | - | 140mOhm @ 5A, 6V | 19109480 | - | - | DFN8080-8 | GaNFET (Gallium Nitride) | - | 2.5V @ 17.2mA | +7V, -1.4V | - | - | - | - | |
| VBsemi | 5 $1.9924 | TSMC wafer,JCET (Jiangsu Changjiang Electronics Technology)。DFN8X8;NChannel,650V,20A,RDS(ON)=110mΩ@6V,VGS=-1.4~+7V,VGS(th)=1.2~2.5V;、,、。 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | DFN-8 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | GAN140-650EBEZ-VB VBsemi | |
| VBsemi | 5 $2.1303 50 $2.0604 100 $2.0081 200 $1.9732 | TSMC wafer,JCET (Jiangsu Changjiang Electronics Technology)。GaN (Gallium Nitride),650V,20A,RDS(ON)=110mΩ@6V,VGS=-1.7~7V,VGS(th)=1.2~2.5V,Encapsulated asDFN5x6、、,、、5G radio frequency、In-Vehicle OBC 。 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | DFN | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | GAN140-650FBE-VB VBsemi | |
| nexperia | 1 $9.8108 10 $5.9325 100 $4.2904 500 $3.8101 1,000 $3.3713 | TVS Diode 650V 140mΩ@6V 125pF@400V 3.5nC@6V 7V 113W | GAN140 | - | 17A (Ta) | - | - | - | - | 650 V | 6V | - | - | - | - | - | - | 3.5 nC @ 6 V | 125 pF @ 400 V | - | - | 3 (168 Hours) | - | Surface Mount, Wettable Flank | - | - | - | -55°C ~ 150°C (TJ) | - | 8-PowerVDFN | - | - | 113W (Ta) | - | 140mOhm @ 5A, 6V | 19109793 | - | - | DFN5060-5 | GaNFET (Gallium Nitride) | - | 2.5V @ 17.2mA | +7V, -1.4V | - | - | - | - | |
| VBsemi | 5 $1.2781 50 $1.2362 100 $1.2048 200 $1.1839 | TSMC Fabrication, JCET Packaging DFN 8x8 GaN High Freq Low Loss Efficient Compact; Apps: Quick Charge, Server PSU, 5G RF, Auto OBC | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | DFN | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | GAN190-650EBE-VB VBsemi | |
| nexperia | 1 $9.061 10 $5.4407 100 $4.0155 500 $3.4873 1,000 $2.8762 | 125W(Ta) 7V 2.5V@12.2mA 2.8nC@ 6 V 650V 190mΩ@ 3.9A,6V 96pF@400V 1individualNChannel DFN-8080-8 SMD mount | GAN190 | - | 11.5A (Ta) | - | - | - | - | 650 V | 6V | - | - | - | - | - | - | 2.8 nC @ 6 V | 96 pF @ 400 V | - | - | 3 (168 Hours) | - | Surface Mount, Wettable Flank | - | - | - | -55°C ~ 150°C (TJ) | - | 8-VDFN Exposed Pad | - | - | 125W (Ta) | - | 190mOhm @ 3.9A, 6V | 19109876 | - | - | DFN8080-8 | GaNFET (Gallium Nitride) | - | 2.5V @ 12.2mA | +7V, -1.4V | - | - | - | - | |
| VBsemi | 5 $1.2781 50 $1.2362 100 $1.2048 200 $1.1839 | TSMC wafer,JCET (Jiangsu Changjiang Electronics Technology)。Encapsulated asDFN5x6,、、,、、5G radio frequency、In-Vehicle OBC 。 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | DFN | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | GAN190-650FBE-VB VBsemi | |
| nexperia | 1 $8.002 10 $4.6796 100 $3.3846 500 $2.8895 1,000 $2.6775 | 125W(Tc) 7V 2.5V@12.2mA 2.8nC@ 6 V 650V 190mΩ@ 3.9A,6V 96pF@400V 1individualNChannel DFN-5060-5 SMD mount | GAN190 | - | 11.5A (Ta) | - | - | - | - | 650 V | 6V | - | - | - | - | - | - | 2.8 nC @ 6 V | 96 pF @ 400 V | - | - | 3 (168 Hours) | - | Surface Mount, Wettable Flank | - | - | - | -55°C ~ 150°C (TJ) | - | 8-PowerVDFN | - | - | 125W (Ta) | - | 190mOhm @ 3.9A, 6V | 19109776 | - | - | DFN5060-5 | GaNFET (Gallium Nitride) | - | 2.5V @ 12.2mA | +7V, -1.4V | - | - | - | - | |
| nexperia | 1 $7.3143 10 $4.2654 100 $3.0227 500 $2.4589 1,000 $2.4109 | 28W 6V 7.6nC@ 5V 150V 7mΩ@ 5V 865pF@ 85V FCLGA | GAN7R0 | - | 28A | - | - | - | - | 150 V | 5V | - | - | - | - | - | - | 7.6 nC @ 5 V | 865 pF @ 85 V | - | - | 3 (168 Hours) | - | Surface Mount | - | - | - | -40°C ~ 150°C (TJ) | - | 3-VLGA | - | - | 28W | - | 7mOhm @ 10A, 5V | 19109518 | - | - | 3-FCLGA (3.2x2.2) | GaNFET (Gallium Nitride) | - | 2.1V @ 5mA | +6V, -4V | - | - | - | - | |
| nexperia | 1 $5.0221 10 $2.9446 100 $2.0022 500 $1.5863 1,000 $1.53 5,000 $1.3644 | 13W(Ta) 2.4V@1mA 15.8nC@ 5 V 40V 4.8mΩ@ 10A,5V 887pF@20V 1individualNChannel SMD mount | - | 887pF@20V | - | - | - | 4.8mΩ@ 10A, 5V | 40V | - | - | 1individualNChannel | - | - | 15.8nC@ 5 V | 2.4V@1mA | - | - | - | - | 13W(Ta) | - | SMD mount | - | - | 125℃(TJ) | -40℃(TJ) | - | - | - | - | - | - | - | - | - | Tape and reel packaging | - | - | - | - | - | - | - | - | - | - | |
| VBsemi | 5 $1.2781 50 $1.2362 100 $1.2048 200 $1.1839 | TSMC wafer,JCET (Jiangsu Changjiang Electronics Technology)。Encapsulated asDFN5x6,、、,、、5G radio frequency、In-Vehicle OBC 。 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | DFN | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | GANE350-650FBA-VB VBsemi | |
| nexperia | 1 $15.5816 5 $12.642 10 $9.4873 50 $8.2714 100 $6.9381 250 $6.8006 | GAN TRANSISTOR, 100A, 20NC, VQFN; | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | Tape and reel packaging | - | - | - | - | - | - | - | - | - | - | |
| ROHM | 1 $7.0204 5 $7.0204 10 $6.2903 50 $6.1779 100 $6.0656 250 $6.0656 | 56W(Tc) 2.4V@18mA 5.2nC@ 6 V 650V 98mΩ@ 1.9A,5.5V 200pF@400V 1individualNChannel DFN-8080K SMD mount | GNP1070 | - | 20A (Tc) | - | - | - | - | 650 V | 5V, 5.5V | - | - | - | - | - | - | 5.2 nC @ 6 V | 200 pF @ 400 V | - | - | 3 (168 Hours) | - | Surface Mount | - | - | - | 150°C (TJ) | - | 8-PowerDFN | - | - | 56W (Tc) | - | 98mOhm @ 1.9A, 5.5V | 18996959 | - | - | DFN8080K | GaNFET (Gallium Nitride) | - | 2.4V @ 18mA | +6V, -10V | - | - | - | - | |
| VBsemi | 5 $2.1303 50 $2.0604 100 $2.0081 200 $1.9732 | TSMC wafer,JCET (Jiangsu Changjiang Electronics Technology)。GaN (Gallium Nitride),650V,20A,RDS(ON)=110mΩ@6V,VGS=-1.7~7V,VGS(th)=1.2~2.5V,Encapsulated asDFN 8x8、、,、、5G radio frequency、In-Vehicle OBC 。 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | DFN | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | GNP2130TEC-Z-VB VBsemi | |
| VBsemi | 5 $1.2781 50 $1.2362 100 $1.2048 200 $1.1839 | TSMC wafer,JCET (Jiangsu Changjiang Electronics Technology)。Encapsulated asDFN5x6,、、,、、5G radio frequency、In-Vehicle OBC 。 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | DFN | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | GNP2250TB-Z-VB VBsemi | |
| GaNext | 10 $1.5292 100 $1.2234 300 $1.0704 3,000 $0.7646 | 0 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | QFN-6 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | GNZ6613 GaNext | |
| GaNPower | 1 $3.25 | 1.4V@1.75mA 2.6nC@ 6 V 650V 240mΩ@ 6V,2.5A 5A 45pF@400V 1individualNChannel SMD mount | - | 45pF@400V | - | - | 5A | 240mΩ@ 6V, 2.5A | 650V | - | - | 1individualNChannel | - | - | 2.6nC@ 6 V | 1.4V@1.75mA | - | - | - | - | - | - | SMD mount | - | - | 150℃(TJ) | -55℃(TJ) | - | - | - | - | - | - | On sale | - | - | Tape and reel packaging | - | - | - | - | - | - | - | - | - | GPI65005DF GaNPower | |
| GaNPower | 1 $5.2 | MOSFET 1.4V@3.5mA 2.1nC@6V 650V 8A 63pF@400V 1-Ch N-Ch SMD | - | 63pF@400V | - | - | 8A | - | 650V | - | - | 1individualNChannel | - | - | 2.1nC@ 6 V | 1.4V@3.5mA | - | - | - | - | - | - | SMD mount | - | - | 150℃(TJ) | -55℃(TJ) | - | - | - | - | - | - | On sale | - | - | Tape and reel packaging | - | - | - | - | - | - | - | - | - | GPI65008DF56 GaNPower | |
| GaNPower | 2,500 $0.2365 7,500 $0.2326 12,500 $0.2266 | 1.7V@3.5mA 2.1nC@ 6 V 650V 63pF@400V 1individualNChannel SMD mount | - | 63pF@400V | - | - | - | - | 650V | - | - | 1individualNChannel | - | - | 2.1nC@ 6 V | 1.7V@3.5mA | - | - | - | - | - | - | SMD mount | - | - | 150℃(TJ) | -55℃(TJ) | - | - | - | - | - | - | - | - | - | Tape and reel packaging | - | - | - | - | - | - | - | - | - | GPI65008DF68 GaNPower | |
| GaNPower | 2,500 $0.3154 7,500 $0.3101 12,500 $0.3022 | 1.4V@3.5mA 2.6nC@ 6 V 650V 90pF@400V 1individualNChannel DFN-5 SMD mount | - | - | 10A | - | - | - | - | 650 V | 6V | - | - | - | - | - | - | 2.6 nC @ 6 V | 90 pF @ 400 V | - | - | Vendor Undefined | - | Surface Mount | - | - | - | -55°C ~ 150°C (TJ) | - | Die | Tape & Reel (TR) | - | - | - | - | - | - | - | Die | GaNFET (Gallium Nitride) | - | 1.4V @ 3.5mA | +7.5V, -12V | - | - | - | - | |
| GaNPower | 1 $9.75 | 1.2V@3.5mA 3.3nC@ 6 V 650V 15A 116pF@400V 1individualNChannel SMD mount | - | - | 15A | - | - | - | - | 650 V | 6V | - | - | - | - | - | - | 3.3 nC @ 6 V | 116 pF @ 400 V | - | - | Vendor Undefined | - | Surface Mount | - | - | - | -55°C ~ 150°C (TJ) | - | Die | Tape & Reel (TR) | - | - | - | - | - | - | - | Die | GaNFET (Gallium Nitride) | - | 1.2V @ 3.5mA | +7.5V, -12V | - | - | - | - | |
| GaNPower | 1 $9.75 | 1.2V@3.5mA 3.3nC@ 6 V 650V 15A 123pF@400V 1individualNChannel SMD mount | - | - | 15A | - | - | - | - | 650 V | 6V | - | - | - | - | - | - | 3.3 nC @ 6 V | 123 pF @ 400 V | - | - | Vendor Undefined | - | Surface Mount | - | - | - | -55°C ~ 150°C (TJ) | - | Die | Tube | - | - | - | - | - | - | - | Die | GaNFET (Gallium Nitride) | - | 1.2V @ 3.5mA | +7.5V, -12V | - | - | - | - | |
| GaNPower | 1 $19.5 | 1.4V@3.5mA 5.8nC@ 6 V 650V 241pF@400V 1individualNChannel TO-263 SMD mount | - | 241pF@400V | - | - | - | - | 650V | - | - | 1individualNChannel | - | - | 5.8nC@ 6 V | 1.4V@3.5mA | - | - | - | - | - | - | SMD mount | - | - | 150℃(TJ) | -55℃(TJ) | - | TO-263 | - | - | - | - | - | - | - | Tape and reel packaging | - | - | - | - | - | - | - | - | - | GPI65030TO5L GaNPower | |
| VBsemi | 5 $1.2781 50 $1.2362 100 $1.2048 200 $1.1839 | GaN, DFN5x6 Package, High Freq Low Loss, High Efficiency, Compact. Apps: Fast Charge, Server PS, 5G RF, Auto OBC | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | DFN | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | GS-065-008-1-L-TR-VB VBsemi | |
| VBsemi | 5 $1.2781 50 $1.2362 100 $1.2048 200 $1.1839 | GaN, DFN5x6 Package, High Freq Low Loss, High Efficiency, Compact. Apps: Fast Charge, Server PS, 5G RF, Auto OBC | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | DFN | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | GS-065-008-6-L-TR-VB VBsemi | |
| HXY MOSFET | 2,500 $2.649 5,000 $2.6049 7,500 $2.5386 | MOSFET, N-Channel, ID 10A, VDSS 650V, RDSON 160mΩ, VGS -1.4~+7V | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | DFN-8 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | GS-065-011-1-L-TR HXY MOSFET | |
| VBsemi | 5 $1.2781 50 $1.2362 100 $1.2048 200 $1.1839 | TSMC wafer,JCET (Jiangsu Changjiang Electronics Technology)。Encapsulated asDFN5x6,、、,、、5G radio frequency、In-Vehicle OBC 。 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | DFN | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | GS-065-011-1-L-TR-VB VBsemi | |
| HXY MOSFET | 2,500 $2.9643 5,000 $2.915 7,500 $2.8408 | MOSFET, N-Channel, ID 10A, VDSS 650V, RDSON 160mΩ, VGS -1.4~+7V | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | DFN-8 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | GS-065-011-2-L-TR HXY MOSFET | |
| VBsemi | 5 $1.2781 50 $1.2362 100 $1.2048 200 $1.1839 | TSMC wafer,JCET (Jiangsu Changjiang Electronics Technology)。Encapsulated asDFN 8x8,、、,、、5G radio frequency、In-Vehicle OBC 。 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | DFN | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | GS-065-011-2-L-TR-VB VBsemi | |
| VBsemi | 5 $1.2781 50 $1.2362 100 $1.2048 200 $1.1839 | TSMC wafer,JCET (Jiangsu Changjiang Electronics Technology)。Encapsulated asDFN 8x8,、、,、、5G radio frequency、In-Vehicle OBC 。 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | DFN | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | GS-065-011-6-L-TR-VB VBsemi | |
| VBsemi | 5 $1.2781 50 $1.2362 100 $1.2048 200 $1.1839 | TSMC wafer,JCET (Jiangsu Changjiang Electronics Technology)。Encapsulated asDFN 8x8,、、,、、5G radio frequency、In-Vehicle OBC 。 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | DFN | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | GS-065-011-6-LR-TR-VB VBsemi |
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